集成电路芯片资料和参数

芯片型号:ESD5311Z

参数指标

Product:ESD5311Z

Configuration:bi-directional

Channel:1

Reverse Stand-off Voltage VRWM(V):±5

Reverse Breakdown Voltage VBR(@1mA)(V) (Min.):7.5

Peak Pulse Power PPK(8/20us)(W):84

Peak Pulse Current IPP(8/20us)(A):4

Clamping Voltage VCL(@IPP)(V):21

ESD(Contact)(kV):±20

Clamping Voltage VCL @ITLP = 16A(V):21

Junction Capacitance CJ(pF) (Typ.):0.25

Junction Capacitance CJ(pF) (Max.):0.4

Package:DFN0603-2L

Size(mm) (L*W):0.6*0.3