集成电路芯片资料和参数

芯片型号:ESD5342N

参数指标

Product:ESD5342N

Configuration:uni-directional

Channel:2

Reverse Stand-off Voltage VRWM(V):5

Reverse Breakdown Voltage VBR(@1mA)(V) (Min.):7.0

Peak Pulse Power PPK(8/20us)(W):60

Peak Pulse Current IPP(8/20us)(A):4

Clamping Voltage VCL(@IPP)(V):15

ESD(Contact)(kV):±20

Clamping Voltage VCL @ITLP = 16A(V):17.5

Junction Capacitance CJ(pF) (Typ.):1.0

Junction Capacitance CJ(pF) (Max.):1.4

Package:DFN1006-3L

Size(mm) (L*W):1.0*0.6