集成电路芯片资料和参数

芯片型号:ESD5411N

参数指标

Product:ESD5411N

Configuration:bi-directional

Channel:1

Reverse Stand-off Voltage VRWM(V):±7

Reverse Breakdown Voltage VBR(@1mA)(V) (Min.):7.2

Peak Pulse Power PPK(8/20us)(W):70

Peak Pulse Current IPP(8/20us)(A):6

Clamping Voltage VCL(@IPP)(V):12

ESD(Contact)(kV):±30

Clamping Voltage VCL @ITLP = 16A(V):12

Junction Capacitance CJ(pF) (Typ.):17.5

Junction Capacitance CJ(pF) (Max.):22

Package:DFN1006-2L

Size(mm) (L*W):1.0*0.6