集成电路芯片资料和参数

芯片型号:ESD5251N

参数指标

Product:ESD5251N

Configuration:bi-directional

Channel:1

Reverse Stand-off Voltage VRWM(V):±5

Reverse Breakdown Voltage VBR(@1mA)(V) (Min.):5.1

Peak Pulse Power PPK(8/20us)(W):30

Peak Pulse Current IPP(8/20us)(A):3

Clamping Voltage VCL(@IPP)(V):10

ESD(Contact)(kV):±20

Clamping Voltage VCL @ITLP = 16A(V):12.7

Junction Capacitance CJ(pF) (Typ.):4.8

Junction Capacitance CJ(pF) (Max.):7

Package:DFN1006-2L

Size(mm) (L*W):1.0*0.6